High quality GaN films - growth and properties
نویسندگان
چکیده
منابع مشابه
architecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولA new system for synthesis of high quality nonpolar GaN thin films.
High quality nonpolar m-plane GaN films were successfully grown on LiGaO(2) (100) substrates for the first time. This m-plane GaN/LiGaO(2) (100) system opens a new approach for realizing highly-efficient nitride devices.
متن کاملHigh-quality InN films on GaN using graded InGaN buffers by MBE
The growth of high-quality thick InN films is challenging because of the lack of native substrates. In this work, we demonstrate the use of a linearly graded InGaN buffer layer for the growth of InN films on GaN substrates. A 500nm InN film with <0.1 nm RMS roughness is obtained with a peak mobility of 1410 cm2/(V&s) at 300K. A strong room temperature photoluminescence showing a bandgap of 0.65...
متن کاملGrowth and properties of InGaN nanoscale islands on GaN
Strong photoluminescence and radiative recombination lifetimes longer than 1 ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing InGaN submicron islands. The flat islands, with a width at their base in the order of 200 nm and a height in the order of 1—2 nm, grow in a spiral mode around dislocations with partial or pure screw character after a passivation of the ...
متن کاملGrowth mechanism and properties of InGaN insertions in GaN nanowires.
We demonstrate the strong influence of strain on the morphology and In content of InGaN insertions in GaN nanowires, in agreement with theoretical predictions which establish that InGaN island nucleation on GaN nanowires may be energetically favorable, depending on In content and nanowire diameter. EDX analyses reveal In inhomogeneities between the successive dots but also along the growth dire...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1998
ISSN: 1092-5783
DOI: 10.1557/s1092578300000958